1/8 february 2002 . STS11NF30L n-channel 30v - 0.009 w - 11a so-8 low gate charge stripfet? power mosfet n typical r ds (on) = 0.009 w @ 10 v n typical qg = 19nc @ 4.5 v n optimal r ds (on) x qg trade-off n conduction losses reduced description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n specifically designed and optimised for high efficiency cpu core dc/dc converters n automotive type v dss r ds(on) i d STS11NF30L 30 v <0.012 w 11 a so-8 absolute maximum ratings ( ) pulse width limited by safe operating area. ( ) current limited by the package (1) i sd 11a, di/dt 290a/s, v dd v (br)dss , t j t jmax symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 18 v i d ( ) drain current (continuos) at t c = 25c 11 a i d drain current (continuos) at t c = 100c 7a i dm ( ) drain current (pulsed) 44 a p tot total dissipation at t c = 25c 2.5 w derating factor 0.02 w/c dv/dt (1) peak diode recovery voltage slope 4 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c internal schematic diagram
STS11NF30L 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic rthj-amb t l thermal resistance junction-ambient maximum lead temperature for soldering purpose max typ 50 150 c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 18 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 5.5 a v gs = 5 v i d = 5.5 a 0.009 0.014 0.012 0.0185 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds =25v i d = 5.5 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1470 490 110 pf pf pf
3/8 STS11NF30L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 35 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 20 65 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v i d = 11a v gs =4.5v 19 5 10 25 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 5.5 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 35 24 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 11 44 a a v sd (*) forward on voltage i sd = 11 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 75 110 2.9 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STS11NF30L 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STS11NF30L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics . . .
STS11NF30L 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STS11NF30L dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data
STS11NF30L 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
|
